Here, we developed a strategy-directly grafting the photochromic groups onto the high-performance semiconductor molecule motif and studied the light-induced self-straining effect. To our knowledge, such a light-responsive self-strained organic semiconductor has not been proposed, although the such effect may have been unintentionally used in many previous photo-responsive devices. It is natural to the hypothesis that the light-induced strain in organic semiconductors should also demonstrate light-strain modulation. On the other hand, for photoresponsive molecules, if the photoisomerization group is incorporated, molecules’ rearranged packing can induce intrinsic strain, which has been utilized in light-responsive actuators 11, 12, 13. It’s worth noticing that, due to differences in material structure, the strain effect shows fascinating distinctions in inorganic and organic semiconductors, which deserves further investigation.
#RESPONSIVE RESIZE FOR DRUPAL 8 SKIN#
Over the past decade, due to the potential application in flexible electronics, such as electronic skin and low-cost flexible displays 5, 6, 7, the strain effect on organic semiconductors is also extensively studied, where impressive material performance improvements are observed 8, 9, 10. The strained silicon, germanium, GaAs, and newly developed 2D materials have been widely used and studied for high-performance electronic circuits 1, 2, 3, 4. Strain engineering is an important method to modulate the physical properties in conventional inorganic semiconductor material.
On this basis, a large-scale flexible organic field-effect transistor (OFET) device array is fabricated and realizes high-resolution UV imaging with reversible light response. Notably, the AZO-BTBT-8 photoisomerization leads to lattice strain in thin-film devices, where exceptional device performance enhancement is realized. Octane is employed to increase molecular flexibility and solubility, and azobenzene at the other end of the BTBT backbone provides photoisomerization properties and structural balance. Here, we design and synthesize a new OSC material named AZO-BTBT-8 based on high-mobility benzobenzothienothiophene (BTBT) as the semiconductor backbone. Strain engineering is an effective method to improve the semiconductor material’s carrier mobility, which is fundamentally originated from the rearrangement of the atomic packing model of materials under mechanic stress. With the wide application of organic semiconductors (OSCs), researchers are now grappling with a new challenge: design and synthesize OSCs materials with specific functions to satisfy the requirements of high-performance semiconductor devices.
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